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NTD4809NH fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTD4809NH
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTD4809NH fiche technique
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NTD4809NH
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
11.5
9.0
2.0
9.0
7.0
1.3
58
45
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
52
130
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
43 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 15 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS 112.5 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
ID MAX
58 A
N−Channel
G
S
4
4
12
3
DPAK
CASE 369C
(Bent Lead)
STYLE 2
1
2
3
3 IPAK
IPAK
CASE 369AD CASE 369D
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4809NH= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 1
1
Publication Order Number:
NTD4809NH/D

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