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ON Semiconductor - Low Vce(sat) PNP Transistor

Numéro de référence NSS30100LT1G
Description Low Vce(sat) PNP Transistor
Fabricant ON Semiconductor 
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NSS30100LT1G fiche technique
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NSS30100LT1G
30 V, 2 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
−30
−50
−5.0
−1.0
−2.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
310 mW
2.5 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 1)
403
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710 mW
5.7 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 2)
176
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
575 mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
http://onsemi.com
30 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 200 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
DEVICE MARKING
3
VS4
12
VS4 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSS30100LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS30100L/D

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