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PDF NSS30071MR6T1G Data sheet ( Hoja de datos )
| Número de pieza | NSS30071MR6T1G | |
| Descripción | Low VCE(sat) NPN Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS30071MR6T1G
30 V, 0.7 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 1)
VCEO
VCBO
VEBO
IC
IB
PD
PD
RqJA
30 V
40 V
5.0 V
700 mA
350 mA
342 mW
178 mW
366 °C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
PD
PD
RqJA
665 mW
346 mW
188 °C/W
Operating and Storage Temperature Range
TJ, Tstg −55 to °C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
http://onsemi.com
30 VOLTS
0.7 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 200 mW
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
654
1 23
SC−74
CASE 318F
STYLE 2
DEVICE MARKING
VS3M
VS3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSS30071MR6T1G SC−74 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS30071MR6/D
1 page  
NSS30071MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
A
L
65 4
S
12 3
B
D
G
0.05 (0.002)
H
C
M
J
K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
INCHES
DIM MIN MAX
A 0.1142 0.1220
B 0.0512 0.0669
C 0.0354 0.0433
D 0.0098 0.0197
G 0.0335 0.0413
H 0.0005 0.0040
J 0.0040 0.0102
K 0.0079 0.0236
L 0.0493 0.0649
M 0 _ 10_
S 0.0985 0.1181
MILLIMETERS
MIN MAX
2.90 3.10
1.30 1.70
0.90 1.10
0.25 0.50
0.85 1.05
0.013 0.100
0.10 0.26
0.20 0.60
1.25 1.65
0 _ 10_
2.50 3.00
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.074
0.7
0.028
0.95
0.037
0.95
0.037
1.0
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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