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NSR15ADXV6T5 fiches techniques PDF

ON Semiconductor - (NSR15ADXV6T1 / NSR15ADXV6T5) Dual RF Schottky Diode

Numéro de référence NSR15ADXV6T5
Description (NSR15ADXV6T1 / NSR15ADXV6T5) Dual RF Schottky Diode
Fabricant ON Semiconductor 
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NSR15ADXV6T5 fiche technique
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NSR15ADXV6T1,
NSR15ADXV6T5
Dual RF
Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
Low Capacitance (<1.0 pF)
Low VF (390 mV Typical @ 1.0 mA)
Low VFD (1.0 mV Typical @ 1.0 mA)
These are Pb−Free Devices
Benefits
Reduced Parasitic Losses
Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Forward Current
Operating and Storage
Temperature Range
Symbol
VR
IF
TJ, Tstg
Max
15
30
−65 to
+150
Unit
V
mA
°C
ESD Rating:
Class 1 per Human Body Model
Class A per Machine Model
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
6 54
1 23
6
1
SOT−563
CASE 463A
MARKING
DIAGRAM
5RD
5R = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NSR15ADXV6T1 SOT−563
4 mm pitch
4000 / Tape & Reel
NSR15ADXV6T5 SOT−563
2 mm pitch
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
NSR15ADXV6T1/D

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NSR15ADXV6T1 (NSR15ADXV6T1 / NSR15ADXV6T5) Dual RF Schottky Diode ON Semiconductor
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