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PDF NLAS4717 Data sheet ( Hoja de datos )
| Número de pieza | NLAS4717 | |
| Descripción | Dual SPDT Analog Switch | |
| Fabricantes | ON Semiconductor | |
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NLAS4717
4.5 W High Bandwidth, Dual
SPDT Analog Switch
The NLAS4717 is an advanced CMOS analog switch fabricated in
sub−micron silicon gate CMOS technology. The device is a dual
independent Single Pole Double Throw (SPDT) switch featuring two
low RDS(on) of 4.5 W at 3.0 V.
The device also features guaranteed Break−Before−Make (BBM)
switching, assuring the switches never short the driver.
The NLAS4717 is available in two small size packages:
♦ Micro10:
3.0 x 5.0 mm
♦ Flip−Chip−10: 2.0 x 1.5 mm
Features
• Low RDS(on): 4.5 W @ 3.0 V
• Matching Between the Switches ±0.5 W
• Wide Low Voltage Range: 1.8 V to 5.5 V
• High Bandwidth > 40 MHz
• 1.65 V to 5.5 V Operating Range
• Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)
• Ultra−Low Charge Injection ≤ 6.0 pC
• Low Standby Current – ICC = 1.0 nA (Max) @ TA = 25°C
• OVT* on Pins 4 and 8 (CTRL Logic Pins)
• Pb−Free Packages are Available
Typical Applications
• Cell Phones
• PDAs
• MP3s
• Digital Still Cameras
Important Information
• ESD Protection:
HBM = 2000 V, MM = 200 V
• Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78)
• Pin−to−Pin Compatible with MAX4717
*OVT
• Overvoltage Tolerance (OVT) specific pins to operate higher than
normal supply voltages, with no damage to the devices or to signal
integrity.
http://onsemi.com
MARKING
DIAGRAMS
A1
FLIP−CHIP−10
CASE 489AA
4717
AYWW G
G
A1
Micro10
CASE 846B
10
4717
AYW G
G
1
A = Assembly Location
Y = Year
W, WW = Work Week
G = Pb−Free Package
FUNCTION TABLE
IN_ NO_ NC_
0
OFF
ON
1 ON OFF
ORDERING INFORMATION
Device
Package
Shipping†
NLAS4717FCT1 Flip−Chip−10
3000 /
Tape & Reel
NLAS4717FCT1G Flip−Chip−10
(Pb−Free)
NLAS4717MR2
Micro10
3000 /
Tape & Reel
4000 /
Tape & Reel
NLAS4717MR2G Micro10
(Pb−Free)
4000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 8
1
Publication Order Number:
NLAS4717/D
1 page  
NLAS4717
2.0
+85°C
1.5
+25°C
1.0 −40°C
0.5
0.0
0.0
1.0 2.0 3.0 4.0
VCOM (V)
Figure 2. Low RDS(on) @ VCC = 5.0 V
5.0
3.0
2.5
2.0
1.5 +85°C
+25°C
1.0
−40°C
0.5
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VCOM (V)
Figure 3. Low RDS(on) @ VCC = 3.0 V
3.0
1.5
1.4
1.3
1.2
1.1
1.0 5.0 V
0.9
0.8
−40C
+25C
TEMPERATURE (°C)
Figure 4. Delta RDS(on) @ VCC = 5.0 V
+85C
1.5
1.4
1.3
1.2
1.1
1.0 3.0 V
0.9
0.8
−40C
+25C
TEMPERATURE (°C)
Figure 5. Delta RDS(on) @ VCC = 3.0 V
+85C
8
6
4
2
0
−2
−4
−6
−8
−10
0.0
5.0 V
3.0 V
1.0 2.0 3.0 4.0
VCOM (V)
Figure 6. Charge Injection
1
0.1
0.01
5.0 10
3.0 V
100
1000
10000
FREQUENCY (Hz)
100000
Figure 7. Total Harmonic Distortion
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NLAS4717.PDF ] | |
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