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Numéro de référence | IRL1004S | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
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l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)*
PD - 91644A
IRL1004S
IRL1004L
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
S
D2Pak
IRL1004S
TO-262
IRL1004L
Max.
130
92
520
3.8
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/29/99
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Pages | Pages 10 | ||
Télécharger | [ IRL1004S ] |
No | Description détaillée | Fabricant |
IRL1004 | HEXFET Power MOSFET | International Rectifier |
IRL1004L | HEXFET Power MOSFET | International Rectifier |
IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET | International Rectifier |
IRL1004PBF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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