|
|
PDF KHB019N20F1 Data sheet ( Hoja de datos )
| Número de pieza | KHB019N20F1 | |
| Descripción | (KHB019N20F1 / KHB019N20P1) High Voltage MOSFETs | |
| Fabricantes | KEC semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de KHB019N20F1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
KHB019N20P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC converters
and switching mode power supplies.
FEATURES
VDSS=200V, ID=19A
Drain-Source ON Resistance : RDS(ON)=0.18
Qg(typ.)=35nC
@VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB019N20P1 KHB019N20F1
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
200 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
19 19*
12.1 12.1*
76 76*
250
14
4.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above 25
PD
140
1.12
50 W
0.4 W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthJC
RthCS
RthJA
0.89
0.5
62.5
2.5 /W
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
2006. 2. 20
Revision No : 1
G
S
1/7
1 page  
www.DataSheet4U.com
KHB019N20P1/F1
100
Duty=0.5
Rth
{KHB019N20P1}
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4 10-3
10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
Square Wave Pulse Duration (sec)
Rth
{KHB019N20F1}
Duty=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3
10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
Square Wave Pulse Duration (sec)
2006. 2. 20
Revision No : 1
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB019N20F1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KHB019N20F1 | (KHB019N20F1 / KHB019N20P1) High Voltage MOSFETs | KEC semiconductor |
| KHB019N20F2 | N CHANNEL MOS FIELD EFFECT TRANSISTOR |  KEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |