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PDF NTLJF3117P Data sheet ( Hoja de datos )
| Número de pieza | NTLJF3117P | |
| Descripción | Power MOSFET and Schottky Diode | |
| Fabricantes | ON Semiconductor | |
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NTLJF3117P
Power MOSFET and
Schottky Diode
−20 V, −4.1 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
Features
• FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
• mCOOLt Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
• 2x2 mm Footprint Same as SC−88 Package Design
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device
Applications
• Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−3.3
−2.4
−4.1
1.5
2.3
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−2.3
−1.6
0.71
A
W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
−20
−55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
−1.9
A
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
http://onsemi.com
V(BR)DSS
−20 V
MOSFET
RDS(on) MAX ID MAX (Note 1)
100 mW @ −4.5 V
135 mW @ −2.5 V
200 mW @ −1.8 V
−4.1 A
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.48 V
IF MAX
2.0 A
DA
G
S
P−CHANNEL MOSFET
K
SCHOTTKY DIODE
MARKING
DIAGRAM
1
WDFN6
CASE 506AN
16
2 JHMG 5
3G4
JH = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C 2
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NTLJF3117P/D
1 page  
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NTLJF3117P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1200
VDS = 0 V VGS = 0 V
1000
Ciss
TJ = 25°C
5
4
QT
20
16
800
600
400 Crss
3 VDS
2 QGS
QGD
VGS 12
8
200 Coss
0
50
VGS
VDS
5
10 15
1
0
20 0
4
ID = −2.2 A
TJ = 25°C
0
1 2 3 456
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = −15 V
ID = −2.2 A
VGS = −4.5 V
100
tf
tr
10 td(off)
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
3
VGS = 0 V
2.5
2
1.5
1
0.5
TJ = 150°C
TJ = 25°C
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
100
TC = 25°C
TJ = 150°C
SINGLE PULSE
10
1
10 ms
100 ms
1 ms
10 ms
*See Note 2 on Page 1
0.1
RDS(on) LIMIT
THERMAL LIMIT
dc
0.01
0.1
PACKAGE LIMIT
1
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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