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Número de pieza | NTJS4151P | |
Descripción | Trench Power MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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NTJS4151P
Trench Power MOSFET
−20 V, −4.2 A, Single P−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life
• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V(BR)DSS
−20 V
http://onsemi.com
RDS(on) TYP
47 mW @ −4.5 V
70 mW @ −2.5 V
180 mW @ −1.8 V
ID Max
−4.2 A
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 25 °C
VDSS
VGS
ID
PD
−20
±12
−3.3
−2.4
−4.2
1.0
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−10
−55 to
150
−1.3
260
ESD
Human Body Model (HBM) ESD 4000
Unit
V
V
A
W
A
°C
A
°C
V
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
RqJA
125 °C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
75
Junction−to−Lead – Steady State
RqJL
45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area =
1.127 in sq. [1 oz] including traces).
6
1
SC−88
(SOT 363)
CASE 419B
TY D
TY = Device Code
D = Date Code
SC−88
(SOT−363)
D1
6D
D2
5D
G3
4S
Top View
ORDERING INFORMATION
Device
Package
Shipping†
NTJS4151PT1
SC−88 3000 Units/Reel
NTJS4151PT1G SC−88
3000 Units/Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 0
1
Publication Order Number:
NTJS4151P/D
1 page www.DataSheet4U.com
NTJS4151P
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE U
A
G
654
S −B−
123
D 6 PL
C
0.2 (0.008) M B M
N
J
HK
SOLDERING FOOTPRINT*
0.50
0.0197
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD
419B−02.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.031 0.043
D 0.004 0.012
G 0.026 BSC
H −−− 0.004
J 0.004 0.010
K 0.004 0.012
N 0.008 REF
S 0.079 0.087
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.80 1.10
0.10 0.30
0.65 BSC
−−− 0.10
0.10 0.25
0.10 0.30
0.20 REF
2.00 2.20
0.65
0.025
0.40
0.0157
0.65
0.025
1.9
0.0748
ǒ ǓSCALE 20:1
mm
inches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTJS4151P.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTJS4151P | Trench Power MOSFET | ON Semiconductor |
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