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DIM200WHS17-A000 fiches techniques PDF

Dynex Semiconductor - Half Bridge IGBT Module

Numéro de référence DIM200WHS17-A000
Description Half Bridge IGBT Module
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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DIM200WHS17-A000 fiche technique
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DIM200WHS17-A000
DIM200WHS17-A000
Half Bridge IGBT Module
Replaces issue December 2003, version FDS5673-2.3
FDS5673-3.0 January 2004
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Base Plate
APPLICATIONS
I Inverters
I Motor Controllers
I Induction Heating
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
1(E1C2)
2(E2)
3(C1)
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200WHS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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