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PDF DIM200PLM33-F000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200PLM33-F000 | |
| Descripción | IGBT Chopper Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM200PLM33-F000
. IGBT Chopper Module
DS5863- 1.0 September 2005 (LN24182)
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Isolated AlSiC Base with AlN substrates
• High thermal cycling capability
APPLICATIONS
• Choppers
• Motor Controllers
• Power Supplies
• Traction Auxiliaries
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
2.8V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PLM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the lower
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Fig. 1 Chopper circuit diagram
Order As:
DIM200PLM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
1 page  
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SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
Qg
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200PLM33-F000
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) = 16.5Ω
L ∼ 100nH
Cge = 56nF
RG(ON) = 7.5Ω
IF = 200A, VR = 1800V,
dlF/dt = 1600A/µs
Diode arm
Min. Typ. Max. Units
- 1950 - ns
- 170 - ns
- 220 - mJ
- 1180 - ns
- 225 - ns
- 5 - µC
- 290 - mJ
- 80 - µC
- 144 - A
- 75 - mJ
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) = 16.5Ω
L ∼ 100nH, Cge = 56nF
RG(ON) = 7.5Ω
IF = 200A, VR = 1800V,
dlF/dt = 1600A/µs
Diode arm
Min. Typ. Max. Units
- 2200 - ns
- 190 - ns
- 265 - mJ
- 1150 - ns
- 280 - ns
- 390 - mJ
- 125 - µC
- 155 - A
- 130 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DIM200PLM33-F000.PDF ] | |
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