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Número de pieza | DIM600BSS12-E000 | |
Descripción | Single Switch IGBT Module | |
Fabricantes | Dynex Semiconductor | |
Logotipo | ||
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DIM600BSS12-E000
DIM600BSS12-E000
Single Switch IGBT Module
Replaces issue September 2003, version PDS5651-2.0
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5702-1.2 January 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
1.7V
600A
1200A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-E000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600BSS12-E000
Note: When ordering, please use the complete part number.
Outline type code: B
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 600A
C
VGE = ±15V
VCE = 600V
RG(ON) = 3.6Ω
R
G(OFF)
=
1.8Ω
L ~ 70nH
IF = 600A, VR = 600V,
dIF/dt = 4800A/µs
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
Test Conditions
t Turn-off delay time
d(off)
IC = 600A
tf Fall time
VGE = ±15V
EOFF Turn-off energy loss
V = 600V
CE
td(on) Turn-on delay time
RG(ON) = 3.6Ω
t Rise time
r
RG(OFF) = 1.8Ω
EON Turn-on energy loss
L ~ 70nH
Q
rr
Diode reverse recovery charge
I = 600A, V = 600V,
FR
Irr Diode reverse current
dIF/dt = 4400A/µs
EREC Diode reverse recovery energy
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
Min. Typ. Max. Units
- 550 - ns
- 100 - ns
- 62 - mJ
- 200 - ns
- 120 - ns
- 60 - mJ
- 6 - µC
- 45 - µC
- 360 -
A
- 18 - mJ
Min. Typ. Max. Units
- 700 - ns
- 150 - ns
- 95 - mJ
- 250 - ns
- 120 - ns
- 80 - mJ
- 90 - µC
- 440 -
A
- 36 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet DIM600BSS12-E000.PDF ] |
Número de pieza | Descripción | Fabricantes |
DIM600BSS12-E000 | Single Switch IGBT Module | Dynex Semiconductor |
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