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PDF DIM600DDM17-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM600DDM17-A000 | |
| Descripción | Dual Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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. DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 September 2005 (LN24180)
FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated AlSiC Baseplate with AlN Substrates
• High Thermal Cycling Capability
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
• High Power Inverters
• Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM600DDM17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This module is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DDM17-A000
Note: When ordering, please use the whole part number.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EO
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM600DDM17-A000
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 3.3Ω
L ∼ 100nH
IF = 600A, VR = 900V,
dlF/dt = 3000A/µs
Min. Typ. Max. Units
- 1200 - ns
- 140 - ns
- 190 - mJ
- 250 - ns
- 250 - ns
- 220 - mJ
- 6.8 - µC
- 150 - µC
- 350 - A
- 100 - mJ
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 3.3Ω
L ∼ 100nH
IF = 600A, VR = 900V,
dlF/dt = 3000A/µs
Min. Typ. Max. Units
- 1500 - ns
- 170 - ns
- 270 - mJ
- 400 - ns
- 250 - ns
- 350 - mJ
- 250 - µC
- 400 - A
- 150 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DIM600DDM17-A000.PDF ] | |
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