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DIM600XSM45-F000 fiches techniques PDF

Dynex Semiconductor - Single Switch IGBT Module

Numéro de référence DIM600XSM45-F000
Description Single Switch IGBT Module
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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DIM600XSM45-F000 fiche technique
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Preliminary
Data
DIM600XSM45-F000
Single Switch IGBT Module
DS5874-1.0 October 2005 (LN24333)
FEATURES
10µs Short Circuit Withstand
Soft Punch Through Silicon
Lead Free construction
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
V CES
4500V
V CE(sat) *
(typ) 3.0 V
I C (max) 600A
I C(PK)
(max) 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM600XSM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety.
ORDERING INFORMATION
Order As:
DIM600XSM45-F000
Note: When ordering, please use the complete part number
Fig. 1 Single switch circuit diagram
Outline type code: X
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Page 1 of 7Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF

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