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ROHM Semiconductor - NPN 100mA 50V Complex Digital Transistors

Numéro de référence UMG2N
Description NPN 100mA 50V Complex Digital Transistors
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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UMG2N fiche technique
EMG2 / UMG2N / FMG2A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
50V
100mA
47kW
47kW
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
2) Two DTC144E chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
lOutline
EMT5
(5)
(1)
(2)
(3)
(4)
EMG2
(SC-107BB)
SMT5
(1)
(5)
(4)
(3)
(2)
FMG2A
(SC-74A)
UMT5
(4)
(3)
(2)
(1)
(5)
UMG2N
SOT-353 (SC-88A)
lInner circuit
EMG2 / UMG2N
IN GND IN
(3) (2) (1)
FMG2A
IN GND IN
(3) (4) (5)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(4)
OUT
(5)
OUT
(2)
OUT
(1)
OUT
lPackaging specifications
Part No.
Package
EMG2
UMG2N
FMG2A
EMT5
UMT5
SMT5
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T148
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
G2
G2
G2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.B

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