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Numéro de référence | MA26V03 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
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Variable Capacitance Diodes
MA26V03
Silicon epitaxial planar type
For VCO
■ Features
• Good linearity and large capacitance-ratio in CD − VR relation
• Small series resistance rD
• High frequency type by this low capacitance
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Junction temperature
Storage temperature
VR 6
Tj 125
Tstg −55 to +125
Unit
V
°C
°C
32
1.00±0.05
1
Unit: mm
0.39+−00..0031
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
Marking Symbol: 2F
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Diode capacitance
Capacitance ratio
Series resistance *
IR
CD1V
CD4V
CD1V / CD4V
rD
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 470 MHz
10 nA
5.20 5.80 pF
2.10 2.58
2.1 2.6
0.3 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz.
3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: November 2003
SKD00074CED
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Pages | Pages 3 | ||
Télécharger | [ MA26V03 ] |
No | Description détaillée | Fabricant |
MA26V01 | Silicon epitaxial planar type | Panasonic Semiconductor |
MA26V02 | Silicon epitaxial planar type | Panasonic Semiconductor |
MA26V03 | Silicon epitaxial planar type | Panasonic Semiconductor |
MA26V04 | Silicon epitaxial planar type | Panasonic Semiconductor |
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