(PDF) MA26376 Datasheet - Silicon epitaxial planar type

Número de pieza	MA26376
Descripción	Silicon epitaxial planar type
Fabricantes	Panasonic Semiconductor
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No Preview Available ! www.DataSheet4U.com Variable Capacitance Diodes MA26376 Silicon epitaxial planar type For UHF wireless telegraphic VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Junction temperature Storage temperature VR 6 Tj 125 Tstg −55 to +125 Unit V °C °C Unit: mm 32 1.00±0.05 1 0.39+−00..0031 0.25±0.05 0.25±0.05 1 32 0.65±0.01 0.05±0.03 Marking Symbol: 2T 1: Anode 2: N.C. 3: Cathode ML3-N2 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current Diode capacitance Series resistance * IR CD1V CD3V rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 10 16.00 8.90 0.3 nA pF Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: January 2004 SKD00071CED 1 1 page

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PDF MA26376 Data sheet ( Hoja de datos )