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PDF HAF1001 Data sheet ( Hoja de datos )
| Número de pieza | HAF1001 | |
| Descripción | Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF1001 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HAF1001
Silicon P Channel MOS FET Series
Power Switching / Over Temperature Shut–down Capability
ADE-208-583 A (Z)
2nd Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220AB
D4
G Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 page  
HAF1001
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
I D = –10 A
–0.8
–0.4 –5 A
–2 A
0 –2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
VGS = –4 V
0.1
0.05 –10 V
0.02
0.01
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
0.16
I D = –10 A
–5 A
0.12 VGS = –4 V
–10 A
–2 A
0.08 –2, –5 A
0.04
0
–40
–10 V
Pulse Test
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
V DS = –10 V
Pulse Test
20
10 Tc = –25 °C
5
25 °C
2 75 °C
1
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAF1001.PDF ] | |
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