IRFB3206PBF Datasheet PDF - International Rectifier
| Part Number | IRFB3206PBF | |
| Description | (IRFxx3206PBF) HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
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There is a preview and IRFB3206PBF download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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Applications
l High Efficiency Synchronous Rectification
in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
60V
2.4m:
3.0m:
cG ID (Silicon Limited) 210A
S ID (Package Limited) 120A
D
D
D
DS
G
TO-220AB
IRFB3206PbF
G
Gate
DS
G
D2Pak
IRFS3206PbF
D
Drain
DS
G
TO-262
IRFSL3206PbF
S
Source
Base Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Orderable Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
IRFS3206TRLPbF
IRFS3206TRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Symbol
Parameter
kJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
210
150
120
840
300
2.0
± 20
5.0
-55 to + 175
300
x x10lb in (1.1N m)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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April 24, 2014
|
| |
 
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1
D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R 1
Ci= τi/Ri
Ci= τi/Ri
R2R 2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.106416 0.0001
τ3τ3 0.201878 0.001262
0.190923 0.011922
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
160 ID = 120A
120
80
40
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFB3206PBF electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFB3206PBF.PDF Datasheet ] | |
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