DataSheetWiki


IRHM58160 fiches techniques PDF

International Rectifier - (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE

Numéro de référence IRHM58160
Description (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRHM58160 fiche technique
www.DataSheet4U.com
PD - 93784F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57160 100K Rads (Si)
IRHM53160 300K Rads (Si)
IRHM54160 600K Rads (Si)
IRHM58160 1000K Rads (Si)
RDS(on)
0.018
0.018
0.018
0.019
ID
35A*
35A*
35A*
35A*
IRHM57160
100V, N-CHANNEL
4# TECHNOLOGY
c
TO-254AA
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- n Ceramic Eyelets
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
35* A
140
250 W
2.0 W/°C
±20 V
500 mJ
35 A
25 mJ
3.4
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/07/02

PagesPages 8
Télécharger [ IRHM58160 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRHM58160 (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche