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PDF 2SB0873 Data sheet ( Hoja de datos )
| Número de pieza | 2SB0873 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−30
−20
−7
−5
−10
1
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
Symbol
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Conditions
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = −2 A
IC = −3 A, IB = − 0.1 A
VCB = −6 V, IE = 50 mA, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min
−20
−7
90
Typ Max
−100
−100
625
−1
120
85
Unit
V
V
nA
nA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE
90 to 135
120 to 205 180 to 625
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00061BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB0873.PDF ] | |
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