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PDF 2SB0819 Data sheet ( Hoja de datos )
| Número de pieza | 2SB0819 | |
| Descripción | For Low-Frequency Output Amplification | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
■ Features
• High collector-emitter voltage (Base open) VCEO
• Large collctor power dissipation PC
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−50
−40
−5
−1.5
−3
1
150
−55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
321
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCB = −5 V, IE = 0.5 A, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
−50 V
−40 V
−1 µA
−100 µA
−10 µA
80 220
−1 V
−1.5 V
150 MHz
45 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00059BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB0819.PDF ] | |
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