DataSheetWiki


NTLTD7900ZR2 fiches techniques PDF

ON Semiconductor - N-Channel Micro-8 Leadless

Numéro de référence NTLTD7900ZR2
Description N-Channel Micro-8 Leadless
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





NTLTD7900ZR2 fiche technique
www.DataSheet4U.com
NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N−Channel
Micro−8 Leadless
EZFETsare an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 4000 V Human Body Model
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive − Can be Driven by Logic ICs
Micro−8 Leadless Surface Mount Package − Saves Board Space
IDSS Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
(tp v 10 ms)
VDSS
VGS
ID
IDM
20
±12
9.0 6.0
6.4 4.3
30
V
V
A
A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
3.2 1.5
1.7 0.79
−55 to 150
W
°C
Thermal Resistance (Note 1)
Junction−to−Ambient
RqJA
38
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1x 1FR−4 board.
http://onsemi.com
9 AMPERES
20 VOLTS
RDS(on) = 26 mW
(VGS = 4.5 V, ID = 6.5 A)
RDS(on) = 31 mW
(VGS = 2.5 V, ID = 5.8 A)
D
D
2.4 kW
G1
2.4 kW
G2
N−Channel
S1 S2
N−Channel
MARKING DIAGRAM
1
Micro−8 Leadless
CASE 846C
1
7900
AYWW
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping
NTLTD7900ZR2 Micro−8 LL 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTLTD7900ZR2/D

PagesPages 8
Télécharger [ NTLTD7900ZR2 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTLTD7900ZR2 N-Channel Micro-8 Leadless ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche