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Número de pieza | HMNP32MM | |
Descripción | Non-Volatile SRAM MODULE 32Mbyte | |
Fabricantes | Hanbit Electronics | |
Logotipo | ||
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HANBit
HMNP32MM
Non-Volatile SRAM MODULE 32Mbyte (8M x 32Bit), PCI interface, (SMM) 5V
Part No. HMNP32MM
GENERAL DESCRIPTION
The HMNP32MM Nonvolatile SRAM is a 33,554,432-byte static RAM organized as 16,777,216 words by 16 bits.
The HMNP32MM has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of
standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-tolerance condition. When
such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and
write protection is unconditionally enabled to prevent garbled data.
In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy
source is switched on to sustain the memory until after VCC returns valid.
The HMNP32MM uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-volatility
without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85 and 100ns
w High-density design : 32Mbyte Design
w Battery internally isolated until power is applied
w Unlimited write cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down cycles
w Data is automatically protected during power loss
w Industrial temperature operation
OPTIONS
w Timing
55 ns
70 ns
MARKING
- 55
- 70
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1
HANBit Electronics Co.,Ltd
1 page HANBit
HMNP32MM
TRUTH TABLE
MODE
Not selected
Output disable
Read
Write
/OE /CE /WE I/O OPERATION POWER
XHX
High Z
Standby
HLH
High Z
Active
LLH
DOUT
Active
XL L
DIN
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT REMARK
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Vin,VCC
Vcc
-0.5 to 7.0
-0.5 to 7.0
V
V
Power Dissipation
Pd 32
W
Storage temperature
TSTG -65 to 150
°C
Operating Temperature
0 to 70
Ta
-40 to 85
°C
°C
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K6T4016C3C-B
K6T4016C3C-F
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN
Supply Voltage
VCC
Ground
VSS
Input high voltage
VIH
Input low voltage
VIL
NOTE: Typical values indicate operation at TA = 25℃
4.5V
0
2.2
-0.5
TYPICAL
5.0V
0
-
-
MAX
5.5V
0
VCC+0.5V
0.8V
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
5
HANBit Electronics Co.,Ltd
5 Page HANBit
PACKAGE DIMENSION
HMNP32MM
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
11
HANBit Electronics Co.,Ltd
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet HMNP32MM.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMNP32MM | Non-Volatile SRAM MODULE 32Mbyte | Hanbit Electronics |
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