|
|
PDF IRHQ4110 Data sheet ( Hoja de datos )
| Número de pieza | IRHQ4110 | |
| Descripción | (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHQ4110 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 93785A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7110 100K Rads (Si)
IRHQ3110 300K Rads (Si)
IRHQ4110 600K Rads (Si)
IRHQ8110 1000K Rads (Si)
RDS(on)
0.6Ω
0.6Ω
0.6Ω
0.75Ω
ID
3.0A
3.0A
3.0A
3.0A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ7110
100V, QUAD N-CHANNEL
RAD-Hard™ HEXFET®
MOSFETTECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
3.0
1.9 A
12
12 W
0.1 W/°C
±20 V
85 mJ
3.0 A
1.2 mJ
3.0
-55 to 150
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/00
1 page  
Pre-Irradiation
IRHQ7110
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400 Coss = Cds + Cgd
300 Ciss
200
100
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 3.07A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 2 4 6 8 10 12 14
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
0.1
0.4
TJ = 25 ° C
VGS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHQ4110.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHQ4110 | (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |