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International Rectifier - (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Numéro de référence IRHQ53110
Description (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricant International Rectifier 
Logo International Rectifier 





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IRHQ53110 fiche technique
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PD - 94211A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
IRHQ57110 100K Rads (Si) 0.27
IRHQ53110 300K Rads (Si) 0.27
IRHQ54110 600K Rads (Si) 0.27
IRHQ58110 1000K Rads (Si) 0.29
ID
4.6A
4.6A
4.6A
4.6A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ57110
100V, Quad N-CHANNEL
RAD-HardHEXFET®
4# TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
4.6
2.9 A
18.4
12 W
0.1 W/°C
±20 V
47 mJ
4.6 A
1.2 mJ
6.1 V/ns
-55 to 150
oC
300 (for 5s)
0.89 (Typical)
g
1
08/01/01

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