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Número de pieza | HE8811 | |
Descripción | GaAlAs Infrared Emitting Diode | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HE8811 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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HE8811
GaAlAs Infrared Emitting Diode
ODE-208-999B (Z)
Rev.2
Mar. 2005
Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high
brightness, high output power and fast response make it suitable as a light source in measuring instruments
and infrared-beam communication equipment.
Features
• High-frequency response
• High efficiency and high output power
• Broad radiation pattern
Package Type
• HE8811: SG1
Internal Circuit
1
2
1 page Package Dimensions
HE8811
As of July, 2002
Unit: mm
φ 5.4 ± 0.2
φ 4.65 ± 0.2
φ 4.0 ± 0.2
2 Ð φ 0.45 ± 0.1
1
2.54 ± 0.35
1.0 ± 0.2
2
(2 – φ1.05)
45° ± 5°
OPJ Code
JEDEC
JEITA
Mass (reference value)
IR/SG1
—
—
0.25 g
Rev.2, Mar. 2005, page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HE8811.PDF ] |
Número de pieza | Descripción | Fabricantes |
HE8811 | GaAlAs Infrared Emitting Diode | Hitachi |
HE8812SG | GaAlAs Infrared Emitting Diode | Hitachi Semiconductor |
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