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PDF PE4246 Data sheet ( Hoja de datos )

Número de pieza PE4246
Descripción Absorptive SPST UltraCMOS RF Switch
Fabricantes Peregrine Semiconductor 
Logotipo Peregrine Semiconductor Logotipo



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Product Description
The PE4246 RF Switch is designed to cover a broad range of
applications from DC to 5000 MHz. It is non-reflective at both
RF1 and RF2 ports. This SPST switch integrates a single-pin
CMOS control interface, and provides low insertion loss while
operating with extremely low bias from a single +3-volt supply.
In a typical application, the high isolation PE4246 can replace
multiple RF switches of lesser isolation performance. It is
offered in a small 3x3 mm DFN package.
The PE4246 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
RF1 RF2
Product Specification
PE4246
Absorptive SPST UltraCMOS™
RF Switch: DC - 5000 MHz
Features
Non-reflective 50-ohm RF switch
50-ohm (0.25 watt) terminations
High isolation: 55 dB at 1000 MHz,
48 dB at 3000 MHz
Low insertion loss: 0.8 dB at 1000 MHz,
0.9 dB at 3000 MHz
High linearity: +33 dBm input 1dB
compression point
CMOS/TTL single-pin control
Single +3-volt supply operation
Extremely low bias: 33 µA @ 3 V
Available in a 6-lead DFN package
Figure 2. Package Type
6-lead DFN
50 CMOS 50
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 )
Parameter
Operation Frequency1
Operating Power
Insertion Loss
Isolation
Return Loss
Input 1 dB Compression3
Input IP3
Video Feedthrough2
Switching Time
Condition
CTRL=1/CTRL=0
DC-2000 MHz
2000-3000 MHz
3000-4000 MHz
4000-5000 MHz
DC-2000 MHz
2000-3000 MHz
3000-4000 MHz
4000-5000 MHz
DC-5000 MHz
DC-5000 MHz
DC-5000 MHz
Minimum
DC
49
45
43
40
11
30
50
Typical
0.8
0.9
1.0
1.3
55
48
46
44
20
33
2
Maximum
5000
30/24
1.0
1.1
1.3
1.8
15
Units
MHz
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
mVpp
µs
Notes: 1. Device linearity will begin to degrade below 1 MHz.
2. The DC transient at the output of the switch when the control voltage is switched from Low to High or High to Low in a 50 test set-up,
measured with 1ns risetime pulses and 500 MHz bandwidth.
3. Note Absolute Maximum ratings in Table 3.
Document No. 70-0090-05 www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8

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PE4246 pdf
PE4246
Product Specification
Evaluation Kit
The SPST Switch Evaluation Kit board was
designed to ease customer evaluation of the
PE4246 SPST switch. The RF1 port is connected
through a 50 transmission line to the top left
SMA connector, J1. The RF2 port is connected
through a 50 transmission line to the top right
SMA connector, J2. A through transmission line
connects SMA connectors J3 and J4. This
transmission line can be used to estimate the loss
of the PCB over the environmental conditions
being evaluated.
The board is constructed of a two metal layer FR4
material with a total thickness of 0.031”. The
bottom layer provides ground for the RF
transmission lines. The transmission lines were
designed using a coplanar waveguide model with
trace width of 0.0476”, trace gaps of 0.030”,
dielectric thickness of 0.028”, metal thickness of
0.0021” and εR of 4.3. Note that the predominate
mode for these transmission lines is coplanar
waveguide with a ground plane.
J5 and J6 provide a means for controlling DC and
digital inputs to the device. J6-1 is connected to
the device VDD input. J5-1 is connected to the
device CTRL input. J5-2 and J6-2 are GND
connections. A decoupling capacitor (100 pF) is
provided on both CTRL and VDD traces. It is the
responsibility of the customer to determine proper
supply decoupling for their design application.
Removing these components from the evaluation
board has not been shown to degrade RF
performance.
Figure 11. Evaluation Board Layouts
Peregrine Specification 101/0102
Figure 12. Evaluation Board Schematic
Peregrine Specification 102/0134
Document No. 70-0090-05 www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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