DataSheetWiki


PE4231 fiches techniques PDF

Peregrine Semiconductor - SPDT High Power UltraCMOS

Numéro de référence PE4231
Description SPDT High Power UltraCMOS
Fabricant Peregrine Semiconductor 
Logo Peregrine Semiconductor 





1 Page

No Preview Available !





PE4231 fiche technique
www.DataSheet4U.com
Product Description
The PE4231 SPDT High Power UltraCMOS™ RF Switch is
designed to cover a broad range of applications from DC to 1.3
GHz. This single-supply reflective switch integrates on-board
CMOS control logic driven by a simple, single-pin CMOS or
TTL compatible control input. Using a nominal +3-volt power
supply, a typical input 1 dB compression point of +32 dBm can
be achieved. The PE4231 also exhibits input-output isolation of
better than 42 dB at 1.0 GHz and is offered in a small 8-lead
MSOP package.
The PE4231 SPDT High Power UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Product Specification
PE4231
SPDT High Power UltraCMOS™
DC – 1.3 GHz RF Switch
Features
Optimized for 75 systems
Single +3-volt power supply
Low insertion loss: 0.80 dB at 1.0 GHz
High isolation: 42 dB at 1.0 GHz
Typical input 1 dB compression point of
+32 dBm
Single-pin CMOS or TTL logic control
Low cost
Figure 1. Functional Diagram
RFCommon
Figure 2. Package Type
8-lead MSOP
RF1 RF2
CMOS
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 )
Parameter
Operation Frequency1
Insertion Loss
Isolation – RFCommon to
RF1/RF2
Isolation – RF1 to RF2
Return Loss
‘ON’ Switching Time
‘OFF’ Switching Time
Video Feedthrough2
Input 1 dB Compression3
Input IP33
Conditions
50 MHz
1000 MHz
50 MHz
1000 MHz
50 MHz
1000 MHz
1000 MHz
CTRL to 0.1 dB final value, 2 GHz
CTRL to 25 dB isolation, 2 GHz
1000 MHz
1000 MHz, 17 dBm
Minimum
DC
73
40
58
33
16
30
50
Typical
0.50
0.80
75
42
60
35
17
2000
900
15
32
Maximum
1300
0.60
0.90
Units
MHz
dB
dB
dB
dB
ns
ns
mVpp
dBm
dBm
Notes:
1. Device linearity will begin to degrade below 1 MHz.
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3. Measured in a 50 system.
Document No. 70-0097-01 www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7

PagesPages 7
Télécharger [ PE4231 ]


Fiche technique recommandé

No Description détaillée Fabricant
PE4230 SPDT High Power UltraCMOS RF Switch Peregrine Semiconductor
Peregrine Semiconductor
PE4231 SPDT High Power UltraCMOS Peregrine Semiconductor
Peregrine Semiconductor
PE4232 SPST CATV UltraCMOS Switch Peregrine Semiconductor
Peregrine Semiconductor
PE423422 SPDT RF Switch Peregrine Semiconductor
Peregrine Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche