NP80N03ELE Datasheet PDF - NEC
| Part Number | NP80N03ELE | |
| Description | SWITCHING N-CHANNEL POWER MOS FET | |
| Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2600 pF TYP.
• Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N03CLE
TO-220AB
NP80N03DLE
TO-262
NP80N03ELE
5 NP80N03KLE
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT
Total Power Dissipation (TC = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
30
±20
±80
±320
1.8
120
175
–55 to +175
50 / 40 / 9
2.5 / 160 / 400
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 µs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.)
(TO-262)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14032EJ4V0DS00 (4th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
1999, 2000
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NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12 Pulsed
10 VGS = 4.5 V
5V
10 V
8
6
4
2
0 ID = 40 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10 VGS = 0 V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
10 tr
td(off)
td(on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Drain Current - A
1
0.1 1
10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 16
35 14
30
25
VDD = 24 V
15 V
20 6 V
VGS 12
10
8
15 6
10 4
VDS
5
2
ID = 80 A
00
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
Data Sheet D14032EJ4V0DS
5
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Featured Datasheets
| Part Number | Description | MFRS |
| NP80N03ELE | The function is SWITCHING N-CHANNEL POWER MOS FET. NEC | |
| NP80N03ELE | The function is (NP80N03xLE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET. NEC | |
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