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NP80N03CLE fiches techniques PDF

NEC - SWITCHING N-CHANNEL POWER MOS FET

Numéro de référence NP80N03CLE
Description SWITCHING N-CHANNEL POWER MOS FET
Fabricant NEC 
Logo NEC 





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NP80N03CLE fiche technique
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
Channel Temperature 175 degree rated
Super Low On-state Resistance
RDS(on)1 = 7.0 mMAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mMAX. (VGS = 5 V, ID = 40 A)
Low Ciss : Ciss = 2600 pF TYP.
Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N03CLE
TO-220AB
NP80N03DLE
TO-262
NP80N03ELE
5 NP80N03KLE
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT
Total Power Dissipation (TC = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
30
±20
±80
±320
1.8
120
175
–55 to +175
50 / 40 / 9
2.5 / 160 / 400
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1%
3. Starting Tch = 25°C, RG = 25 , VGS = 20 0 V (see Figure 4.)
(TO-262)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14032EJ4V0DS00 (4th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
1999, 2000

PagesPages 8
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