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FZ1600R17KF6B2 fiches techniques PDF

eupec GmbH - Hochstzulassige Werte / Maximum rated values

Numéro de référence FZ1600R17KF6B2
Description Hochstzulassige Werte / Maximum rated values
Fabricant eupec GmbH 
Logo eupec GmbH 





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FZ1600R17KF6B2 fiche technique
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1600 R 17 KF6 B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1700
1600
3200
3200
12,5
+/- 20V
1600
3200
980
4
V
A
A
A
kW
V
A
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1600A, V GE = 15V, Tvj = 25°C
IC = 1600A, V GE = 15V, Tvj = 125°C
IC = 130mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, V GE = 0V, Tvj = 25°C
VCE = 1700V, V GE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Oliver Schilling
approved by: Chr. Lübke; 11.10.99
date of publication: 4.9.1999
revision: 2 (Serie)
1(8)
VCE sat
min.
typ.
2,6
3,1
max.
3,1
3,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG 19 µC
Cies 105 nF
Cres 5,3 nF
ICES 0,04 3 mA
20 160 mA
IGES 400 nA
FZ1600R17KF6B2

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