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PDF BFR183TF Data sheet ( Hoja de datos )

Número de pieza BFR183TF
Descripción Silicon NPN Planar RF Transistor
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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VISHAY
BFR183TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT490 is also re-
ducing package inductances resulting in some better
electrical performance. All of these aspects make this
device an ideal choice for demanding RF applica-
tions.
Features
• Small feedback capacitance
• Low noise figure
• High power gain
Applications
For low noise and high gain broadband amplifiers at
collector currents from 2 mA to 30 mA.
1
23
16867
Electrostatic sensitive device.
Observe precautions for handling.
Mechanical Data
Typ: BFR183TF
Case: Plastic case (SOT 490)
Weight: 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR183TF
Marking
RH
SOT490
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Tamb 60 °C
Storage temperature range
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Symbol
RthJA
Value
15
10
2
65
5
200
150
- 65 to + 150
Value
450
Unit
V
V
V
mA
mA
mW
°C
°C
Unit
K/W
Document Number 85102
Rev. 2, 23-Sep-02
www.vishay.com
1

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