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PDF BAR63V-02V Data sheet ( Hoja de datos )

Número de pieza BAR63V-02V
Descripción RF PIN Diode
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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RF PIN Diode - Single in SOD-523
BAR63V-02V
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
1
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
1 while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
2
2
16863
Features
• Low forward resistance
• Space saving SOD-523 package with
low series inductance
e3
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-02V
Ordering code
BAR63V-02V-GS18 or BAR63V-02V-GS08
Marking
C
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
VR
IF
Tj
Tstg
Value
50
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Symbol
RthJS
Value
100
Unit
K/W
Document Number 85642
Rev. 1.5, 29-Jun-05
www.vishay.com
1

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