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PDF B12V114 Data sheet ( Hoja de datos )
| Número de pieza | B12V114 | |
| Descripción | NPN LOW NOISE SILICON MICROWAVE TRANSISTOR | |
| Fabricantes | Bipolarics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de B12V114 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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BIPOLARICS, INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 10 GHz typ @ IC = 25mA
• Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
• High Gain
| S | 2 = 16.9 dB @ 1.0 GHz
21
12.0 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V114 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
VCBO
VCEO
VEBO
IC
TJ (1)
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
12
1.5
60
200
-65 to 150
V
V
V
mA
oC
oC
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
VCE = 8V, IC = 25 mA unless stated
UNIT
MIN.
TYP.
MAX.
ft
|S 21 | 2
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
GHz
dB
dB
10.0
16.9
12.0
P1d B
G1d B
Power output at 1dB compression:
Gain at 1dB compression:
f = 1.0 GHz
f = 1.0 GHz
dBm
dBm
18.0
15.0
NF
hFE
ICBO
IEBO
CCB
Noise Figure: VCE = 8V, IC = 10mA
Forward Current Transfer Ratio:
VCE = 8V, IC =25 mA
Collector Cutoff Current : VCB = 8V
Emitter Cutoff Current : VEB = 1V
Collector Base Capacitance: VCB = 8V
f = 1.0 GHz
f = 1MHz
f = 1MHz
dB
µA
µA
pF
1.4
30 150
0.25
300
0.2
1.0
1 page  
PAGE 5
BIPOLARICS, INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
04 Package: 0.145" Plastic X-PAC
85 Package: 0.085" Plastic Micro-X
86 Package: 0.085" Plastic,Surface Mount
0.02 1
.51
2
0.032+0.015
2.34+0.38
0.008+0.002
0.203+0.051
3
4
.020+.010
0.51+.25
0.106+0.015
2.67+0.38
0.026+0.001
0.66+0.13
0.085+0.005
2.16+0.13
0.060+0.01
1.52+0.25
87 Package: 0.085" Plastic,Short Lead
.020
.51
4
13
.60+0.10
1.52+.26 5
2
.065
2.15
.008+.002
.20+.050
.215+.010
.020 5.46+.25
.51
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet B12V114.PDF ] | |
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