DataSheetWiki


2MBI450UE-120 fiches techniques PDF

FE - IGBT Module U-Series

Numéro de référence 2MBI450UE-120
Description IGBT Module U-Series
Fabricant FE 
Logo FE 





1 Page

No Preview Available !





2MBI450UE-120 fiche technique
www.DataSheet4U.com
2MBI450UE-120
IGBT Module U-Series 1200V / 450A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C1 E2
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
G1 E1
Item
Symbol
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltaga
Collector current
VGES
IC
Continuous Tc=25°C
Tc=80°C
ICp 1ms Tc=25°C
Tc=80°C
-IC
Collector Power Dissipation
-IC pulse
PC
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
Screw Torque
Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
Rating
1200
±20
675
450
1350
900
450
900
2080
+150
-40 to +125
2500
3.5
4.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=450mA
VGE=15V, IC=450A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=450A
VGE=±15V
RG=0.68
VGE=0V
IF=450A
IF=450A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Min.
4.5
Typ.
6.5
2.00
2.25
1.75
2.00
50
0.36
0.21
0.03
0.37
0.07
1.85
1.95
1.60
1.70
0.45
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
FWD
With thermal compound
Min.
Typ.
0.0167
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
3.0
600
8.5
2.35
2.10
1.20
0.60
1.00
0.30
2.15
1.90
0.35
Max.
0.060
0.08
G2 E2
Unit
V
V
A
W
°C
VAC
N·m
Unit
mA
nA
V
V
nF
µs
V
µs
m
Unit
°C/W
°C/W
°C/W

PagesPages 4
Télécharger [ 2MBI450UE-120 ]


Fiche technique recommandé

No Description détaillée Fabricant
2MBI450UE-120 IGBT Module U-Series FE
FE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche