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PDF HFA50HF20 Data sheet ( Hoja de datos )
| Número de pieza | HFA50HF20 | |
| Descripción | Soft Recovery Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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PD 2.506
HEXFREDTM
PRELIMINARY
HFA50HF20
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
CATHODE
ANODE
ANODE
VR = 200V
VF = 0.96V
Qrr * = 640nC
di(rec)M/dt * = 980A/µs
* 125°C
SMD -1
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM @ TC = 25°C
PD @ TC = 25°C
TJ
TSTG
Parameter
D.C. Reverse Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
200
50
600
125
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
RθJC
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Typ.
—
2.6
Max.
1.0
—
Units
°C/W
g
4/7/97
1 page  
HFA50HF20
RE VERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0 .0 1 Ω
D .U.T.
d if /d t
A DJUST G
D
IR FP 2 5 0
S
IF
0
3
trr
ta
tb
2
I RRM
Q rr 4
0 .5 I R R M
d i(r e c) M/ d t
5
0.75 IRRM
1 d i f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
4/97
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HFA50HF20.PDF ] | |
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