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PDF NE3511S02 Data sheet ( Hoja de datos )
| Número de pieza | NE3511S02 | |
| Descripción | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
| Fabricantes | CEL | |
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3511S02-T1D NE3511S02-T1D-A
10 kpcs/reel
Marking
Supplying Form
B • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot Note
Tch
Tstg
Ratings
4
−3
IDSS
100
165
+125
−65 to +125
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
mA
µA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
2006
1 page  
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
1.7 mm/R.P.
NE3511S02
Reference Plane
(Calibration Plane)
φ 0.3 TH
1.7
2.6
1.7
L2–uX Ver. 1
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Reference Plane
(Calibration Plane)
Data Sheet PG10642EJ01V0DS
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NE3511S02.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NE3511S02 | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | CEL |
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