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PDF MA4SW424B-1 Data sheet ( Hoja de datos )
| Número de pieza | MA4SW424B-1 | |
| Descripción | Monolithic SP4T PIN Diode Switch | |
| Fabricantes | Tyco Electronics | |
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Monolithic SP4T PIN Diode Switch
With Integrated Bias Network V 1.00
Features
n Frequency of Operation: 24 +/- 2 GHz
n Fully Integrated Bias Network
n Series Diode, Low Current Consumption Design :
+12mA for Insertion Loss, 0 Volts for Isolation
n The Device is Wire Bond Compensated at all RF Ports
for RF Matching
n Rugged, Fully Monolithic, Glass Encapsulated
Construction
Outline Drawing
Description
The MA4SW424B-1 device is a SP4T Switch with Integrated Bias
Network utilizing M/A-COM's HMICTM (Heterolithic Microwave
Integrated Circuit) Process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form series and/or
shunt diodes or vias by imbedding them in a low loss, low
dispersion glass. By using small spacing between elements, this
combination of silicon and glass gives HMIC devices exceptional
low loss and high isolation performance with exceptional
repeatability through lower millimeter frequencies.
Four mil square RF bond pads facilitate the use of low inductance
ribbon bonds, while gold backside metalization allows for manual
or automatic chip bonding using 80Au/20Sn, Sn62/Pb36/Ag2
solders or electrically conductive silver epoxy. Each RF Bond Pad
has adjacent wire-bonded tuning pads available to optimize the RF
Match for a particular frequency response.
Applications
The MA4SW424B-1 SP4T Device is Designed for 24 GHz
Automotive Switching Applications. Insertion Loss is Achieved
with + 12 mA @ + 4 V and Isolation is Achieved with 0V D.C.
Bias. The RF Bias Network is Integrated into the HMIC Swich for
ease of use and space consideration.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise
specified)
Parameter
Value
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
RF C.W. Incident Power
@ +20 mA
DC Bias Current
+ 30 dBm
+40 mA
Nominal Die Dimensions
Inches
Millimeters
Dim Min Max Min Max
A
0.100 0.104 2.54
2.64
B
0.131 0.135 3.33
3.43
C
0.061 0.062 1.55
1.57
D
0.027 0.028 0.70
0.72
E
0.064 0.065 1.63
1.65
F
0.091 0.092 2.31
2.33
G
0.025 0.026 0.63
0.65
H
0.052 0.052 1.31
1.33
I
0.019 0.020 0.48
0.50
Note:
1. RF and DC Bond Pads are 4 mils (0.10 mm) Square
1. Exceeding any of these values may result in permanent
damage
1 page  
Monolithic SP4T PIN Diode Switch with Integrated Bias Network
Microwave Performance
MA4SW424B-1
V 1.00
MA4SW424B-1 TYPICAL OUTPUT RETURN LOSS
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
22 22.5 23 23.5 24 24.5 25 25.5
Frequency (GHz)
J2 J3 J4 J5
26
MA4SW424B-1 TYPICAL ISOLATION
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
22 22.5 23 23.5 24 24.5 25 25.5 26
Frequency (GHz)
J1-J2
J1-J3
J1-J4
J1-J5
RF Performance Notes
1. The Graphs Represent On-Wafer measurements only. Due to the nature of the design and the implementation
of the device, Ribbon / Wire bonding will shift the frequency response for better RF Match at 24GHz.
- Recommended Wire: (2) 1mil dia. wire, 10mils long or less per RF bond pad.
- Recommended Ribbon: (1) ¼ x 3mil Ribbon, 10 mils long or less per RF bond pad.
2. Tuning Stubs are positioned adjacent to Each RF Pad to Optimize Performance.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MA4SW424B-1.PDF ] | |
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