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Número de pieza | MA4E2039 | |
Descripción | (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
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GaAs Beam Lead Schottky Barrier Diodes
MA4E2037, MA4E2039, MA4E2040
MA4E2037, MA4E2039, MA4E2040
GaAs Beam Lead
Schottky Barrier Diodes
Features
• Low Series Resistance
• Low Capacitance
• High Cut-Off Frequency
• Silicon Nitride Passivation
• Multiple Configurations
Description
M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and
MA4E2040 series tee are gallium arsenide beam lead Schottky
barrier diodes. These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The high carrier mobility of gallium
arsenide results in lower series resistance than a silicon Schottky
with equivalent capacitance, resulting in lower noise figure and
conversion loss. The diodes are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage to the junction
and the anode airbridge during handling.
Applications
The high cut-off frequency of these diodes allows use through low
millimeter wave frequencies. Typical applications include single
and double balanced mixers in PCN transceivers and radios,
automotive radar systems and police radar detectors.
The MA4E2039 antiparallel pair is designed for use in subhar-
monically pumped mixers. Close matching of the diode charac-
teristics results in high LO suppression at the RF input.
Package Outlines1, 2
MA4E2037
0.180 ± .020
(7.1 ± .8)
0.060 (2.4)
0.085 (3.4)
0.265 ± .040
(10.4 ± 1.6)
0.630 ± .010
(24.8 ± .6)
MA4E2039
0.180 ± .020
(7.1 ± .8)
0.060 (2.4)
0.085 (3.4)
0.265 ± .040
(10.4 ± 1.6)
0.630 ± .010
(24.8 ± .6)
0.135 ± .010
(5.3 ± .4)
0.210 ± .040
(8.3 ± 1.6)
0.009 (0.4)
0.013 (0.5)
0.135 ± .010
(5.3 ± .4)
0.210 ± .040
(8.3 ± 1.6)
0.009 (0.4)
0.013 (0.5)
MA4E2040
0.135 ± .010
(5.3 ± .4)
0.375 ± .015
(14.8 ± .6)
Absolute Maximum Ratings1
Parameter
Operating Temperature
Storage Temperature
Incident LO Power
Incident RF Power
Mounting Temperature
Maximum Ratings
-65°C to +125°C
-65°C to +125°C
+20 dBm
+2- dBm
+235°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
0.175 ± .020
(6.9 ± .8)
0.060 (2.4)
0.085 (3.4)
0.350 ± .040
(13.8 ± 1.6)
0.700 ± .015
(27.6 ± .6)
Notes: (unless otherwise specified)
1. Dimensions are in mm (mils)
2. Views are with junction side up.
0.135 ± .010 0.230 ± .040
(5.3 ± .4) (9.1 ± 1.6)
0.009 (0.4)
0.013 (0.5)
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MA4E2039.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA4E2037 | (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes | Tyco Electronics |
MA4E2039 | (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes | Tyco Electronics |
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