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M36L0R7050U1 fiches techniques PDF

ST Microelectronics - (M36L0R70x0x1) Flash memory

Numéro de référence M36L0R7050U1
Description (M36L0R70x0x1) Flash memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M36L0R7050U1 fiche technique
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M36L0R7060U1 M36L0R7060L1
M36L0R7050U1 M36L0R7050L1
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash
memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
Preliminary Data
Feature summary
Multi-Chip Package
– 1 die of 128 Mbit (8Mb x16, Mux I/O
Multiple Bank, Multi-level, Burst) Flash
Memory
– 1 die of 32 or 64Mbit Mux I/O, Burst
Pseudo SRAM
Supply voltage
– VDDF = VDDP = VDDQF = 1.7 to 1.95V
– VPPF = 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Codes (Top Flash Configuration):
M36L0R7060U1: 882Eh,
M36L0R7050U1: 882Eh
– Device Codes (Bottom Flash Configuration)
M36L0R7060L1: 882Fh
M36L0R7050L1: 882Fh
ECOPACK® package
Flash memory
Multiplexed address/data
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Random Access: 85ns
Synchronous burst read suspend
programming time
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple Bank Memory Array: 8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
100,000 program/erase cycles per block
FBGA
TFBGA88 (ZAM)
8 x 10mm
Dual operations
– program/erase in one Bank while read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WPF for Block Lock-Down
– Absolute Write Protection with VPPF = VSS
Common Flash Interface (CFI)
PSRAM
Access time: 70ns
Synchronous modes:
– Synchronous Write: continuous burst
– Synchronous Read: continuous burst or
fixed length: 4, 8 or 16 Words for 32 Mbit
devices or 4, 8,16 or 32 Words for 64 Mbit
devices
– Maximum Clock Frequency: 83MHz
Low power consumption
Low power features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated Self-
Refresh
June 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
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