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PDF LED1200-35M32 Data sheet ( Hoja de datos )
| Número de pieza | LED1200-35M32 | |
| Descripción | Stem type LED | |
| Fabricantes | ETC | |
| Logotipo |  |
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LED1200-35M32 Stem type LED with high output power
LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens
being designed for high output power uses. On forward bias, it emits a spectral band of
radiation, which peaks at 1200nm.
♦Features
1) High radiated intensity
2) High Reliability
♦Outer dimension [Unit:mm]
♦Specifications
1) Product Name
2) Type No.
3) Chip Spec.
(1) Material
(2) Peak Wavelength
4) Package
(1) Type
(2) Lens
(3) Cap
NIR LED Lamp
LED1200-35M32
InGaAs/InP
1200 nm
TO-18 stem
Spherical glass lens
Gold plated
♦Absolute Maximum Ratings
Item Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
120 mW Ta = 25 °C
Forward Current
IF
100 mA Ta = 25 °C
Pulse Forward Current
IFP
1000
mA Ta = 25 °C
Reverse Voltage
VR
3 V Ta = 25 °C
Operating Temperature
TOPR
-20 ~ +90
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature
TSOL
260 °C
‡Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.
‡Soldering condition : Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics
Item Symbol Condition Minimum Typical Maximum
Forward Voltage
VF IF = 20 mA
0.8 1.3
Reverse Current
IR VR = 3 V
10
Total Radiated Power
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
PO IF = 20 mA
λP IF = 20 mA
∆λ IF = 20 mA
θ 1/2 IF = 20 mA
tr IF = 20 mA
0.8
1150
1.8
1200
100
±15
10
1250
Fall Time
tf IF = 20 mA
10
‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742
Unit
V
uA
mW
nm
nm
deg.
ns
ns
1 page | ||
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| PDF Descargar | [ Datasheet LED1200-35M32.PDF ] | |
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