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PDF H7N1004LM Data sheet ( Hoja de datos )
| Número de pieza | H7N1004LM | |
| Descripción | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H7N1004LD, H7N1004LS, H7N1004LM
Silicon N-Channel MOSFET
High-Speed Power Switching
REJ03G0072-0600Z
(Previous ADE-208-1552E(Z))
Rev.6.00
Aug.27.2003
Features
• Low on-resistance
• RDS(on) = 25 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
LDPAK
D
4 44
G
S
1
2
3
1
2
3
1
2
H7N1004LS
3
H7N1004LM
H7N1004LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.6.00, Aug.27.2003, page 1 of 11
1 page  
H7N1004LD, H7N1004LS, H7N1004LM
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I D = 20 A
0.4
10 A
0.2
5A
0 5 10 15 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V GS = 4.5 V
20 10 V
10
5
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
I D = 20 A
5, 10 A
60
40 V GS = 4.5 V
I D = 20 A
20
V GS = 10 V
5, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
1 25°C
0.1
0.01
0.01
75°C
V DS = 10 V
Pulse Test
0.1 1 10
Drain Current I D (A)
100
Rev.6.00, Aug.27.2003, page 5 of 11
5 Page 
H7N1004LD, H7N1004LS, H7N1004LM
• H7N1004LM
As of January, 2003
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.6.00, Aug.27.2003, page 11 of 11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet H7N1004LM.PDF ] | |
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| H7N1004LM | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching | Renesas Technology |
| H7N1004LS | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching | Renesas Technology |
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