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PDF IRG4ZH70UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4ZH70UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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www.DataSheet4U.com
PD - 9.1627A
IRG4ZH70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Surface Mountable
UltraFast CoPack IGBT
Features
q UltraFast IGBT optimized for high switching frequencies
q IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
q Low Gate Charge
q Low profile low inductance SMD-10 Package
q Separated control & Power-connections for
easy paralleling
q Inherently good coplanarity
q Easy solder inspection and cleaning
n-channel
G
E(k)
Benefits
q Highest power density and efficiency available
q HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q IGBTs optimized for specific application conditions
q High input impedance requires low gate drive power
q Less noise and interference
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJC
RθJC
RθCS
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
—
—
—
—
C
VCES = 1200V
VCE(ON)typ = 2.23V
@VGE = 15V, IC = 42A
E
SMD-10
Max.
1200
78
42
312
312
42
312
± 20
350
140
-55 to + 150
Units
V
A
V
W
°C
Typ.
—
—
0.44
6.0(0.21)
Max.
0.36
0.69
—
—
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
www.irf.com
1
1 page  
IRG4ZH70UD
14000
12000
10000
8000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
6000
4000
2000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCC = 400V
I C = 42A
15
10
5
0
0 100 200 300
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
400
10.0
VCC = 800V
VGE = 15V
TJ = 25 ° C
IC = 42A
9.0
8.0
7.0
100
RG =55.0.0ΩOhm
VGE = 15V
VCC = 800V
10
IC = 84 A
IC = 42 A
IC = 21 A
6.0
0
10 20 30
RGG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
www.irf.com
40
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4ZH70UD.PDF ] | |
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