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International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4ZC70UD
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4ZC70UD fiche technique
www.DataSheet4U.com
PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Surface Mountable
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
q UltraFast IGBT optimized for high switching frequencies
q IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
q Low gate charge
q Low profile low inductance SMD-10 package
q Separated control & Power-connections for
easy paralleling
n-channel
G
E(k)
C
E
VCES = 600V
VCE(ON)typ = 1.5V
@VGE = 15V, IC = 50A
q Inherently coplanar pins and tab
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED diodes optimized for performance with IGBTs;
Minimized recovery characteristics
q IGBTs optimized for specific application conditions; high input impedance
requires low gate drive power
q Low noise and interference
Absolute Maximum Ratings
SMD-10
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
Max.
600
100
50
400
400
50
400
± 20
350
140
-55 to + 150
Units
V
A
V
W
°C
Parameter
Min. Typ.
RθJC
RθJC
RθCS
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
——
——
— 0.59
— 6.0(0.21)
Notes: ΠRepetitive rating: VGE = 20V; pulse width limited by
maximum junction temperature (figure 20)
 VCC = 80%(VCES), VGE = 20V, L=10µH, RG= 5.0
(figure 19)
Ž Pulse width 80µs; duty factor 0.1%.
 Pulse width 5.0µs, single shot.
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Max.
0.36
0.69
Units
°C/W
g (oz)

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