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PDF VNQ600AP Data sheet ( Hoja de datos )
| Número de pieza | VNQ600AP | |
| Descripción | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY | |
| Fabricantes | ST Microelectronics | |
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®P VNQ600AP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ600AP
RDS(on) (*)
35mΩ
Ilim
22A
VCC
36 V
(*) Per each channel
s DC SHORT CIRCUIT CURRENT: 22A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE & OVERVOLTAGE
nSHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
nLOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600AP is a quad HSD formed by
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600AP VNQ600AP13TR
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
IOUT
IR
IIN
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
VCSENSE Current sense maximum voltage
IGND
VESD
EMAX
Ptot
Tj
Tstg
Ground current at Tpins < 25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- VCC
Maximum Switching Energy
(L=0.11mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=40A)
Power dissipation (per island) at Tlead=25°C
Junction operating temperature
Storage temperature
Value
41
-0.3
15
-15
+/- 10
-3
+15
-200
4000
2000
5000
5000
126
6.25
Internally Limited
-55 to 150
Unit
V
V
A
A
mA
V
V
mA
V
V
V
V
mJ
W
°C
°C
(**) See application schematic at page 9.
April 2004
1/18
1 page  
VNQ600AP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (VCC=13V)
Symbol
tD(on)
tD(off)
(dVOUT/dt)on
(dVOUT/dt)off
Parameter
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Test Conditions
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
Min
CURRENT SENSE (9V < VCC< 16V) (See Fig. 3)
Symbol
K1
K2
K3
VSENSE1,2
VSENSEH
RVSENSEH
tDSENSE
Parameter
Test Conditions
IOUT/ISENSE
IOUT/ISENSE
IOUT/ISENSE
Max analog sense output
voltage
Analog sense output voltage in
overtemperature condition
IOUT1,2=0.35A; VSENSE=0.5V;
Tj= -40°C...+150°C
IOUT=2A; VSENSE=2.5V; Tj=-40°C
Tj= 25°C...+150°C
IOUT=4A; VSENSE=4V; Tj=-40°C
Tj= 25°C...+150°C
VCC=5.5V; IOUT1,2=2A;
RSENSE=10KΩ
VCC>8V; IOUT1,2=4A;
RSENSE=10KΩ
VCC=13V; RSENSE=3.9KΩ
Analog Sense Output
Impedance in
Overtemperature Condition
VCC=13V; Tj>TTSD; All channels
open
Current sense delay response to 90% ISENSE (see note 2)
Min
3100
3750
4000
4000
4100
2
4
LOGIC INPUT
Symbol
VIL
VIH
VI(hyst)
IIL
IIH
VICL
Parameter
Low level input voltage
High level input voltage
Input hysteresis voltage
Low level input current
High level input current
Input clamp voltage
Test Conditions
VIN=1.25V
VIN=3.25V
IIN=1mA
IIN= -1mA
Min
3.25
0.5
20
6
VCC - OUTPUT DIODE
Symbol
Parameter
VF Forward on Voltage
Test Conditions
-IOUT=2.5A; Tj=150°C
Min
Note 1: Vclamp and VOV are correlated. Typical difference is 5V.
Note 2: current sense signal delay after positive input slope.
Note: Sense pin doesn’t have to be left floating.
Typ
40
40
0.20
0.20
Typ
4150
4600
4600
4500
4500
5
400
Typ
65
75
6.8
-0.7
Typ
Max
Max
5560
5700
5400
5200
5150
500
Max
1.25
110
8
Max
0.9
Unit
µs
µs
V/µs
V/µs
Unit
V
V
V
Ω
µs
Unit
V
V
V
µA
µA
V
V
Unit
V
5/18
2
5 Page 
Off State Output Current
IL(off1) (uA)
5
4.5
Off state
4 Vcc=36V
Vin=Vout=0V
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc (°C)
Input Clamp Voltage
100 125 150 175
Vicl (V)
8
7.8
Iin=1mA
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
-50 -25 0 25
Input Low Level
50 75
Tc (°C)
100 125 150
175
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
VNQ600AP
High Level Input Current
Iih (uA)
5
4.5
Vin=3.25V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25
Input High Level
50 75
Tc (°C)
100 125 150
175
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Input Hysteresis Voltage
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet VNQ600AP.PDF ] | |
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