PDF NP061A3 Data sheet ( Hoja de datos )

Número de pieza	NP061A3
Descripción	Silicon PNP epitaxial planar transistor
Fabricantes	Panasonic Semiconductor
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No Preview Available ! www.DataSheet4U.com Composite Transistors NP061A3 Silicon PNP epitaxial planar transistor For digital circuits ■ Features • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments ■ Basic Part Number • UNR31A3 × 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation * Junction temperature Storage temperature VCBO VCEO IC PT Tj Tstg −50 −50 −80 125 125 −55 to +125 Note) : Measuring on substrate at 17 mm × 10 mm × 1 mm Unit V V mA mW °C °C 0.12+-00..0023 654 123 (0.35) (0.35) 1.00±0.05 Display at No.1 lead Unit: mm 0 to 0.02 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 1P Internal Connection 65 4 Tr1 Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C 123 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency VCBO VCEO ICBO ICEO IEBO hFE hFE(Small /Large) VCE(sat) VOH VOL R1 R1 / R2 fT IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 VCE = −10 V, IC = −5 mA VCE = −10 V, IC = −5 mA IC = −10 mA, IB = − 0.3 mA VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −3.5 V, RL = 1 kΩ VCB = −10 V, IE = 1 mA, f = 200 MHz −50 −50 80 0.50 −4.9 −30% 0.8 − 0.1 − 0.5 − 0.1 0.99 − 0.25 − 0.2 47 +30% 1.0 1.2 80 V V µA µA mA   V V V kΩ  MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another Publication date: July 2003 SJJ00258BED 1 1 page

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