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Fairchild Semiconductor - Smart Power Module

Numéro de référence FSB50250S
Description Smart Power Module
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FSB50250S fiche technique
www.DataSheet4U.com
September 2006
FSB50250S
Smart Power Module (SPM)
Features
• 500V 2.0A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level 3
General Description
FSB50250S is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50250S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50250S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
VPN1
VPN2
ID25
ID80
IDP
PD
VCC
VBS
VIN
TJ
TSTG
RθJC
VISO
Parameter
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
Conditions
Rating
TJ = 25°C
TJ = 150°C
TC = 25°C
TC = 100°C
TC = 25°C, PW < 100µs
TC = 25°C, For Each FRFET
Applied between VCC and COM
Applied between VB and VS
Applied between IN and COM
500
500
1.0
0.7
2.0
13
20
20
-0.3 ~ VCC+0.3
-20 ~ 150
Each FRFET under inverter operat-
ing condition (Note 1)
-50 ~ 150
9.3
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
1500
Units
V
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2006 Fairchild Semiconductor Corporation
FSB50250S Rev. A
1
www.fairchildsemi.com

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