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PDF HA3-5102-5 Data sheet ( Hoja de datos )

Número de pieza HA3-5102-5
Descripción Dual and Quad/ 8MHz and 60MHz/ Low Noise Operational Amplifiers
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! HA3-5102-5 Hoja de datos, Descripción, Manual

Data Sheet
HA-5102, HA-5104, HA-5114
April 1999 File Number 2925.4
Dual and Quad, 8MHz and 60MHz, Low
Noise Operational Amplifiers
Low noise and high performance are key words describing
HA-5102, HA-5104 and HA-5114. These general purpose
amplifiers offer an array of dynamic specifications ranging
from a 3V/µs slew rate and 8MHz bandwidth (5102/04) to
20V/µs slew rate and 60MHz gain-bandwidth-product
(HA-5114). Complementing these outstanding parameters is
a very low noise specification of 4.3nV/Hz at 1kHz.
Fabricated using the Intersil high frequency DI process,
these operational amplifiers also offer excellent input
specifications such as a 0.5mV offset voltage and 30nA
offset current. Complementing these specifications are
108dB open loop gain and 60dB channel separation.
Consuming a very modest amount of power (90mW/
package for duals and 150mW/package for quads), HA-
5102/04/14 also provide 15mA of output current.
This impressive combination of features make this series of
amplifiers ideally suited for designs ranging from audio
amplifiers and active filters to the most demanding signal
conditioning and instrumentation circuits.
These operational amplifiers are available in dual or quad
form with industry standard pinouts allowing for immediate
interchangeability with most other dual and quad operational
amplifiers.
HA-5102 Dual, Comp. HA-5104 Quad, Comp.
HA-5114 Quad, Uncomp.
Refer to the /883 data sheet for military product.
Ordering Information
TEMP. RANGE
PART NUMBER
(oC)
PACKAGE
HA3-5102-5
0 to 75 8 Ld PDIP
HA7-5102-2
HA1-5104-2
HA1-5104-5
HA3-5104-5
HA9P5104-9
HA3-5114-5
HA9P5114-9
-55 to 125
-55 to 125
0 to 75
0 to 75
-40 to 85
0 to 75
-40 to 85
8 Ld CERDIP
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
16 Ld SOIC
14 Ld PDIP
16 Ld SOIC
PKG. NO
E8.3
F8.3A
F14.3
F14.3
E14.3
M16.3
E14.3
M16.3
Features
• Low Noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/Hz
• Bandwidth. . . . . . . . . . . . . . . . . . . . 8MHz (Compensated)
60MHz (Uncompensated)
• Slew Rate . . . . . . . . . . . . . . . . . . . . 3V/µs (Compensated)
20V/µs (Uncompensated)
• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mV
• Available in Duals or Quads
Applications
• High Q, Active Filters
• Audio Amplifiers
• Instrumentation Amplifiers
• Integrators
• Signal Generators
• For Further Design Ideas, See Application Note AN554
Pinouts
HA-5102 (PDIP, CERDIP)
TOP VIEW
OUT1 1
-IN1 2
+IN1 3
V- 4
+-
8 V+
7 OUT2
6 -IN2
+- 5 +IN2
HA-5104 (PDIP, CERDIP)
HA-5114 (PDIP)
TOP VIEW
OUT1 1
-IN1 2
+IN1 3
V+ 4
+IN2 5
-IN2 6
OUT2 7
1
+-
+-
2
14 OUT4
4
+- 13 -IN4
12 +IN4
11 V-
+- 10 +IN3
9 -IN3
3
8 OUT3
HA5104/5114 (SOIC)
TOP VIEW
OUT1 1
-IN1 2
+IN1 3
V+ 4
+IN2 5
-IN2 6
OUT2 7
NC 8
1
+-
+-
2
16 OUT4
4
+-
15 -IN4
14 +IN4
13 V-
+- 12 +IN3
11 -IN3
3
10 OUT3
9 NC
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

1 page




HA3-5102-5 pdf
HA-5102, HA-5104, HA-5114
Test Circuits and Waveforms (Continued)
IN +
-
OUT
1.8k
50pF
200
NOTE: AV = +10.
FIGURE 3. LARGE AND SMALL SIGNAL RESPONSE
CIRCUIT (AV = +10)
+15V
5k
500(NOTE 9)
2N4416
5k
VIN
200(NOTE 9)
2k
+15V
+
-
-15V
2k
TO
OSCILLOSCOPE
2k
VOUT
50pF
NOTES:
9. AV = -1 (HA-5102/5104), AV = -10 (HA-5114).
10. Feedback and summing resistors should be 0.1% matched.
11. Clipping diodes are optional, HP5082-2810 recommended.
FIGURE 4. SETTLING TIME CIRCUIT
Simplified Schematic
V+
OUTPUT
V-
5
+INPUT
-INPUT

5 Page





HA3-5102-5 arduino
HA-5102, HA-5104, HA-5114
Die Characteristics
DIE DIMENSIONS:
95 mils x 99 mils x 19 mils
2420µm x 2530µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Metallization Mask Layout
+IN2
SUBSTRATE POTENTIAL (POWERED UP):
Unbiased
TRANSISTOR COUNT:
175
PROCESS:
Bipolar Dielectric Isolation
HA-5104
V+
+IN1
-IN2 -IN1
OUT2
OUT3
-IN3
+IN3
+IN2
-IN2
V-
HA-5114
V+
OUT1
OUT4
-IN4
+IN4
+IN1
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
+IN3
11
-IN4
V- +IN4

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