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Numéro de référence | FDD8780 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
www.DataSheet4U.com
March 2006
FDD8780/FDU8780
N-Channel PowerTrench® MOSFET
25V, 35A, 8.5mΩ
AD FREE I
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 12.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V
Low gate resistance
Application
Avalanche rated and 100% tested
Vcore DC-DC for Desktop Computers and Servers
RoHS Compliant
VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
G
D
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8780
FDU8780
FDU8780
Device
FDD8780
FDU8780
FDU8780_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Ratings
25
±20
35
60
224
73
50
-55 to 175
Units
V
V
A
mJ
W
°C
3.0 °C/W
100 °C/W
52 °C/W
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
©2006 Fairchild Semiconductor Corporation
FDD8780/FDU8780 Rev. B
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FDD8780 ] |
No | Description détaillée | Fabricant |
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